类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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SP8M4FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 9A 7A | 110 ns | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 18MOhm | 2W | *M4 | Dual | 2W | N and P-Channel | 18m Ω @ 9A, 10V | 2.5V @ 1mA | 1190pF @ 10V | 21nC @ 5V | 50ns | 70 ns | 7A | 2.5V | 20V | 30V | 30V | 逻辑电平门 | 2.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB56XNEAX | Nexperia USA Inc. | 数据表 | 80000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | YES | SILICON | 3.1A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 6 | 无铅 | AEC-Q101; IEC-60134 | R-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 485mW Ta | 2 N-Channel (Dual) | SWITCHING | 72m Ω @ 3.1A, 4.5V | 1.25V @ 250μA | 256pF @ 15V | 5nC @ 4.5V | 30V | 3.1A | 0.072Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMNH6042SSDQ-13 | Diodes Incorporated | 数据表 | 4242 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 16.7A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.1W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 584pF @ 25V | 4.2nC @ 4.5V | 60V | 5.3A | 0.05Ohm | 35A | 60V | 65 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C446NT1G | ON Semiconductor | 数据表 | 60000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-PowerTDFN | 24A Ta 127A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | 未说明 | 3.2W Ta 89W Tc | 2 N-Channel (Dual) | 2.9m Ω @ 30A, 10V | 3.5V @ 250μA | 2450pF @ 25V | 38nC @ 10V | 40V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN3055LFDB-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 6-UDFN Exposed Pad | 5A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 未说明 | 未说明 | 2 N-Channel (Dual) | 40m Ω @ 3A, 4.5V | 1.5V @ 250μA | 458pF @ 15V | 5.3nC @ 4.5V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN2088DE6TA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 2 | 12.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 1.1W | 鸥翼 | 260 | 40 | 6 | 2 | 增强型MOSFET | 2 ns | 2 N-Channel (Dual) | SWITCHING | 200m Ω @ 1A, 4.5V | 1V @ 250μA | 279pF @ 10V | 3.8nC @ 4.5V | 3.2ns | 20V | 6.2 ns | 1.7A | 8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ325-Z-E1-AZ | Renesas Electronics America Inc | 数据表 | 160 In Stock | - | 最小起订量: 1 最小包装量: 1 | Bulk | Renesas Electronics America Inc | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7338TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SO | 6.3A 3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2W | IRF7338PBF | 2W | 2W | N and P-Channel | 34mOhm @ 6A, 4.5V | 1.5V @ 250μA | 640pF @ 9V | 8.6nC @ 4.5V | 12V | 3A | 8V | 12V | 640pF | 逻辑电平门 | 34mOhm | 34 mΩ | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3025LSDQ-13 | Diodes Incorporated | 数据表 | 60000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6.5A Ta 4.2A Ta | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 1.2W Ta | N and P-Channel | 20m Ω @ 7.4A, 10V, 45m Ω @ 5.2A, 10V | 2V @ 250μA | 501pF 590pF @ 15V 25V | 4.6nC, 5.1nC @ 4.5V | 30V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS6J3TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2004 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 215MOhm | -20V | 1.25W | 鸥翼 | 260 | -1.5A | 10 | *J3 | 6 | Dual | 增强型MOSFET | 1.25W | 10 ns | 2 P-Channel (Dual) | SWITCHING | 215m Ω @ 1.5A, 4.5V | 2V @ 1mA | 270pF @ 10V | 3nC @ 4.5V | 12ns | 20V | 12 ns | 1.5A | -2V | 12V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -2 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
NTZD5110NT5G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 week ago) | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 63.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 250mW | FLAT | 未说明 | 未说明 | NTZD5110N | 6 | 不合格 | Dual | 增强型MOSFET | 250mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 24.5pF @ 20V | 0.7nC @ 4.5V | 7.3ns | 60V | 7.3 ns | 294mA | 20V | 0.294A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
MMDF2P02HDR2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e0 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | 逻辑电平兼容 | -20V | 2W | 鸥翼 | 240 | not_compliant | -2A | 30 | MMDF2P02HD | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 160m Ω @ 2A, 10V | 2V @ 250μA | 588pF @ 16V | 20nC @ 10V | 66ns | 37 ns | 3.3A | 20V | 0.16Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 232 pF | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K6R8-40E,115 | Nexperia USA Inc. | 数据表 | 50 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | LFPAK56D | 40A | 2 | 19.4 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 64W | 2 | Dual | 64W | 8.9 ns | 64W | 2 N-Channel (Dual) | 6.8mOhm @ 20A, 10V | 4V @ 1mA | 1947pF @ 25V | 28.9nC @ 10V | 15.4ns | 40V | 16.5 ns | 40A | 20V | 40V | 40V | 1.947nF | Standard | 5.8mOhm | 6.8 mΩ | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K36MFV,L3F(T,LCFC | TOSHIBA | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDQ7238AS | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | 259.2mg | 14A 11A | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | Obsolete | 1 (Unlimited) | 1.1W | Dual | 2.4W | 1.3W 1.1W | 2 N-Channel (Dual) | 13.2m Ω @ 11A, 10V | 3V @ 250μA | 920pF @ 15V | 24nC @ 10V | 5ns | 5 ns | 14A | 20V | 30V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLLD4901NFTWG | ON Semiconductor | 数据表 | 5581 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-PowerWDFN | YES | 8 | 5.5A 6.3A | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 17.4MOhm | Tin (Sn) | 810mW | 8 | Dual | 3.23W | 800mW 810mW | 2 N-Channel (Dual) | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 605pF @ 15V | 12nC @ 10V | 6.3A | 1.2V | 20V | 9.6A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN33D8LDW-7 | Diodes Incorporated | 数据表 | 374 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 350mW | 鸥翼 | 260 | 30 | AEC-Q101 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 350mW | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 250mA, 10V | 1.5V @ 100μA | 48pF @ 5V | 1.23nC @ 10V | 30V | 250mA | 0.25A | 3Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K17-60EX | Nexperia USA Inc. | 数据表 | 18000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 4 | Tin (Sn) | 雪崩 额定 | 53W | SINGLE | 鸥翼 | not_compliant | 8 | AEC-Q101; IEC-60134 | R-PSSO-G4 | 2 | 增强型MOSFET | DRAIN | 2 N-Channel (Dual) | SWITCHING | 14m Ω @ 10A, 10V | 4V @ 1mA | 1578pF @ 25V | 23.6nC @ 10V | 60V | 30A | 0.014Ohm | 60V | 164A | 55 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2501N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 6A | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 20V | 600mW | 6A | 1W | 600mW | 2 N-Channel (Dual) | 18mOhm @ 6A, 4.5V | 1.5V @ 250μA | 1290pF @ 10V | 17nC @ 4.5V | 20V | 6A | 900mV | 12V | 20V | 1.29nF | 逻辑电平门 | 18mOhm | 18 mΩ | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
MCH6662-TL-H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-SMD, Flat Leads | YES | 6 | 2 | 14.5 ns | 150°C TJ | Tape & Reel (TR) | 2013 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 800mW | 6 | Dual | 800mW | 5.1 ns | 2 N-Channel (Dual) | 160m Ω @ 1A, 4.5V | 128pF @ 10V | 1.8nC @ 4.5V | 11ns | 20V | 12 ns | 2A | 10V | 2A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850μm | 2mm | 1.6mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2512NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 6A | 2 | 47 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 20V | 1.6W | 6A | 1.6W | 8 ns | 1.6W | 2 N-Channel (Dual) | 28mOhm @ 6A, 4.5V | 1.5V @ 250μA | 670pF @ 10V | 12nC @ 4.5V | 57ns | 20V | 57 ns | 6A | 12V | 20V | 670pF | 逻辑电平门 | 28mOhm | 28 mΩ | 1mm | 3mm | 4.4mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
TT8K2TR | ROHM Semiconductor | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 20 ns | 150°C TJ | Cut Tape (CT) | 2015 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.25W | 260 | 10 | *K2 | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.25W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 90m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 180pF @ 10V | 3.2nC @ 4.5V | 30ns | 30V | 20 ns | 2.5A | 12V | 0.13Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
NTLGD3502NT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 day ago) | 表面贴装 | 6-VDFN Exposed Pad | YES | 6 | SILICON | 4.3A 3.6A | 2 | 8.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | Tin (Sn) | 8541.29.00.95 | 1.74W | 无铅 | 260 | 40 | NTLGD3502N | 6 | 不合格 | Dual | 增强型MOSFET | 1.74W | DRAIN | 2 N-Channel (Dual) | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 480pF @ 10V | 4nC @ 4.5V | 17.5ns | 17.5 ns | 3.6A | 20V | 4.3A | 20V | 17.2A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
NTMD5836NLR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 1 week ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 9A 5.7A | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 1.5W | 鸥翼 | NTMD5836 | 8 | Dual | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) | 12m Ω @ 10A, 10V | 3V @ 250μA | 2120pF @ 20V | 50nC @ 10V | 22ns | 8.5 ns | 5.7A | 20V | 9A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
AON3611 | Alpha & Omega Semiconductor Inc. | 数据表 | 5999 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | 5A 6A | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 2.5W | 增强型MOSFET | 2.1W 2.5W | N and P-Channel, Common Drain | 50m Ω @ 5A, 10V | 2.5V @ 250μA | 170pF @ 15V | 10nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 6A | 6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |
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